Referenced Items are not available for this document.
A method for mapping the complete I-V characteristic of a negative differential conductance (NDC) device has been investigated. This method employs the measurable positive differential conductance (PDC) portions of the DC I-V curve together with the measured conductances at a fixed DC bias voltage in the PDC region with different RF signal levels using a standard semiconductor analyzer. The NDC regime of the I-V curve is numerically constructed from the measured conductances at a fixed DC bias voltage in the PDC region with different signal levels using a large-signal nonlinear-circuit analysis.<
Published in:
Electron Device Letters, IEEE
(Volume:13
,
Issue:
10
)
Date of Publication: Oct. 1992
- Page(s):
- 532 - 534
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 4283646
- Digital Object Identifier :
- 10.1109/55.192831
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Oct. 1992
- Sponsored by :
- IEEE Electron Devices Society
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