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Batch fabrication and structure of integrated GaAs-Al/sub x/Ga/sub 1-x/As field-effect transistor-self-electro-optic effect devices (FET-SEED's)

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16 Author(s)
D'Asaro, L.A. ; AT&T Bell Lab., Murray Hill, NJ, USA ; Chirovsky, L.M.F. ; Laskowski, E.J. ; Pei, S.-S.
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The authors have demonstrated a smart pixel prototype field-effect-transistor-self-electrooptic-effect-device (FET-SEED) integrated optoelectronic amplifier utilizing process technology suitable for flexible design and fabrication of high-yield optoelectronic circuits. A single MBE growth sequence provides for quantum-well modulators, photodiodes, doped channel MIS-like field-effect transistors (DMTs), and resistors. The device dimensions are controlled in a planar technology using ion implantation and selective plasma etching for isolation and contacting. Results demonstrate optical amplification in a fully integrated circuit. This technology will enable increased functionality by providing digital electronic processing between optical input and output.<>

Published in:

Electron Device Letters, IEEE  (Volume:13 ,  Issue: 10 )