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GaAs Schottky barrier diodes for THz applications

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4 Author(s)
Crowe, T.W. ; Semicond. Device Lab., Virginia Univ., Charlottesville, VA, USA ; Peatman, W.C.B. ; Wood, P.A.D. ; Xiaolei Liu

The authors review the basic operation of Schottky mixer elements, and consider the factors that limit the high-frequency performance of these devices. The design process used to achieve the best heterodyne receiver performance is discussed. Recent results with ultra-small Schottky anodes are presented, and conclusions are drawn about the future of Schottky diodes at terahertz frequencies.<>

Published in:

Microwave Symposium Digest, 1992., IEEE MTT-S International

Date of Conference:

1-5 June 1992