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Low-threshold current low-voltage vertical-cavity surface-emitting lasers with low-Al-content p-type mirrors grown by MOCVD

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4 Author(s)
Kawakami, T. ; NTT Opto-electron. Lab., Kanagawa, Japan ; Kadota, Y. ; Kohama, Y. ; Tadokoro, T.

InGaAs quantum-well vertical-cavity surface-emitting lasers with low-Al-content p-type mirrors grown by metalorganic chemical vapor deposition (MOCVD) have have been characterized. Series resistance in p-type Al/sub x/Ga/sub 1-x/As/GaAs mirrors decreases drastically as the Al content in Al/sub x/Ga/sub 1-x/As decreases from AlAs. Air-post devices with a p-type Al/sub 0.06/Ga/sub 0.4/As/GaAs top mirror exhibit a room temperature CW threshold current of 1.8 mA at an operating voltage of 2.0 V (with a threshold power consumption at 3.6 mW).<>

Published in:

Photonics Technology Letters, IEEE  (Volume:4 ,  Issue: 12 )