By Topic

Evaluation of piezoresistive coefficient variation in silicon stress sensors using a four-point bending test fixture

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)

The variation of the piezoresistive coefficients from several rosettes on the same die, the same wafer, and finally at different doping levels across a number of wafers was examined. A thorough error analysis of the method of applying a known uniaxial state of stress using a four-point bending (4PB) fixture was completed. A sensor error analysis demonstrated that it is very difficult to determine accurate values for the sum (π1112) using the common two-element rosette, particularly in p-type material. However, an empirical equation was found that provides an estimate for this coefficient. The second piezoresistive coefficient π44 can be measured accurately. However, the results presented for π44 differ from those of previous authors by some 33%. Thus, it appears necessary to measure this value for a given wafer lot

Published in:

IEEE Transactions on Components, Hybrids, and Manufacturing Technology  (Volume:15 ,  Issue: 5 )