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Comparison of I-V, CV, and chemical data for quality control studies of SiO/sub x/N/sub y/ films on Si

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6 Author(s)
G. D. O'Clock ; Sch. of Phys. Eng. & Technol., Mankato State Univ., Mankato, MN, USA ; M. W. Huck ; M. S. Peters ; M. J. Turner
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Capacitance-voltage (CV) and current-voltage (I-V) measurements for SiO/sub x/N/sub y/ films are compared with chemical data in order to provide some diagnostic capabilities in relating aberrant electrical characteristics with contaminants incorporated in the insulator film structure. In-process monitoring of film quality (utilizing electrical characteristics and chemical data) is especially critical in very large-scale integration (VLSI) processing control where the films are utilized both as an integral part of specific semiconductor device processing steps or as part of the semiconductor device structure.<>

Published in:

IEEE Transactions on Semiconductor Manufacturing  (Volume:1 ,  Issue: 4 )