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Reduced Recovery Time Semiconductor Optical Amplifier Using p-Type-Doped Multiple Quantum Wells

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7 Author(s)
L. Zhang ; Lucent Technol. Bell Labs, Holmdel, NJ ; I. Kang ; A. Bhardwaj ; N. Sauer
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The effect of p-type doping of the active region of multiple quantum-well (MQW) semiconductor optical amplifiers (SOAs) has been studied. Spectrogram measurements of the dynamics of the SOAs reveal that using p-doped barriers for the MQWs has significantly reduced both gain and phase recovery times. 1/e phase recovery times as short as 11 ps were demonstrated using this approach

Published in:

IEEE Photonics Technology Letters  (Volume:18 ,  Issue: 22 )