Fabrication of Ge-dots/Si Multilayered Structures by Combination of Low-Pressure CVD and Ni-Induced Lateral Crystallization

Self-assembled Ge quantum dots have attracted a great deal of interests for the realization of silicon- based quantum electronic and optoelectronic devices, such as mid-infrared quantum dot photodetectors, laser, resonant tunnelling diodes, etc. Here, we report on the fabrication of the high density Ge-dots/Si multilayered structure films combining LPCVD and Ni-based MILC processing. The present work is a promising fabrication method to obtain high quality Ge-dots/Si multilayered structure films