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Thin Germanium-Carbon Layers on Silicon for Metal-Oxide-Semiconductor Devices

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5 Author(s)
Kelly, D.Q. ; Microelectron. Res. Center, UT-Austin, Austin, TX ; Wiedmann, I. ; Garcia Gutierrez, D.I. ; Yacaman, M.J.
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Germanium-carbon alloys (Ge1-xCx) were first deposited on Si (100) by chemical vapor deposition using precursors containing Ge-C bonds. The stated objective of that work was to explore Ge1-xCx as a potentially lattice-matched system with Si capable of bandgap engineering. In step with renewed interest in Ge MOSFET devices due to the advent of high-kappa dielectrics, our group has revisited Ge1-xCx recently, and for the first time demonstrated pMOSFETs with enhanced hole mobility fabricated on thin (30 nm) Ge1-xCxlayers deposited directly on Si. This abstract presents previously unreported yet relevant materials-related details of the Ge1-xCx films. The key result is that the Ge1-xCx films exhibit remarkably low threading dislocation densities despite significant strain relaxation

Published in:

SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International

Date of Conference:

15-17 May 2006