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Temperature-Dependent Admittance Analysis of HfO2 Gate Dielectrics on Nitrogen- and Sulfur-Passivated Ge

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4 Author(s)
S. J. Koester ; IBM T. J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598, USA ; M. M. Frank ; D. M. Isaacson ; Huiling Shang

In this work, we characterize MOS capacitors with HfO2 gate dielectrics that utilize sulfur (S) passivation formed by pre-treatment of the Ge surface in an aqueous (NH4)2 S solution before HfO2 deposition, and compare the results with those using the more-standard N-passivation. Using temperature-dependent admittance measurements, we find that the S-passivated samples have lower minimum Dit and reduced flat-band shift, but also display larger accumulation dispersion and hysteresis than N-passivated samples. Results of admittance spectroscopy analysis also suggest that the energy distributions of the interface states are fundamentally different in the two sample types

Published in:

2006 International SiGe Technology and Device Meeting

Date of Conference:

15-17 May 2006