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Strained Pt Schottky Diodes on n-type Si and Ge

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6 Author(s)
Liao, M.H. ; Dept. of Electr. Eng., National Taiwan Univ., Taipei ; Chang, S.T. ; Kuo, P.S. ; Wu, H.T.
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In summary, the reduction of the Schottky-barrier height for the n-type semiconductor under external mechanical strain is observed. This reduction is shown to originate from the reduction of conduction band edge. The boundary condition under uniaxial strain technology is stress-free along the direction perpendicular to uniaxial stress obtain the reasonable agreement between data and theoretical calculation

Published in:

SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International

Date of Conference:

15-17 May 2006

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