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Germanide phase formation and texture

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4 Author(s)
S. Gaudet ; Département de génie physique, École Polytechnique de Montréal, P.O. Box 6079, Station Centre-Ville, Montréal, Québec H3C 3A7 Canada email : simon ; C. Lavoie ; C. Detavernier ; P. Desjardins

The aim of the present study was to complete a systematic investigation of metal-germanium reactions to isolate promising candidates for contacting Ge-based microelectronic devices. Based on their low formation temperature, low resistivity, limited film roughness, sufficient morphological stability, and limited sensitivity to oxidation, NiGe and PdGe were found to be the most promising candidates. These materials are, however, subject to low temperature thermal degradation; therefore, they would probably require stabilization through alloying

Published in:

2006 International SiGe Technology and Device Meeting

Date of Conference:

15-17 May 2006