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Germanide phase formation and texture

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4 Author(s)
Gaudet, S. ; Departement de gdnie Phys., Ecole Polytechnique de Montreal, Que. ; Lavoie, C. ; Detavernier, C. ; Desjardins, P.

The aim of the present study was to complete a systematic investigation of metal-germanium reactions to isolate promising candidates for contacting Ge-based microelectronic devices. Based on their low formation temperature, low resistivity, limited film roughness, sufficient morphological stability, and limited sensitivity to oxidation, NiGe and PdGe were found to be the most promising candidates. These materials are, however, subject to low temperature thermal degradation; therefore, they would probably require stabilization through alloying

Published in:

SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International

Date of Conference:

15-17 May 2006