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Electromechanical conversion efficiency of PZT films

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4 Author(s)
Etzold, K.F. ; IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA ; Roy, R.A. ; Saenger, K.L. ; Cuomo, J.J.

PZT thin films have been prepared by opposed-target RF-sputtering and laser ablation. The titanium to zirconium ratios were 60/40 and 48/52. The latter films were doped with Fe and Sr (PZT 8). The dielectric constant, polarization, and d33 coefficients were measured. A newly designed quadrature looper was used to acquire the polarization data and d33 was measured with a stabilized interferometer. The dielectric properties (ε and P) were slightly lower but comparable to bulk values. The best d33 was 7.7 (for a 60/40 film). The d33 value for the 48/52 RF-sputtered films was significantly lower than what one would expect from dielectric data. PZT films as-deposited are oriented and exhibit piezoelectric activity before any poling treatment. The material was also difficult to depole

Published in:

Ultrasonics Symposium, 1990. Proceedings., IEEE 1990

Date of Conference:

4-7 Dec 1990