By Topic

Simulated Performance of SiC Based OP-AMP at High Temperature

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Jeesung Jung ; Semicond. Power Electron. Center, North Carolina State Univ., Raleigh, NC ; Huang, A.Q. ; Zhong Du

Silicon carbide (SiC) is significantly superior to silicon for high power and high temperature applications. However, currently SiC devices are suffering from some imperfect material properties, such as low channel mobility which results the low transconductance from the circuit design point of view. The possibility of a SiC analog integrated circuit is investigated by comparing analog circuit design parameters between the SiC and Si FET two-stage Op-Amps with temperature variation

Published in:

Power Electronics Specialists Conference, 2006. PESC '06. 37th IEEE

Date of Conference:

18-22 June 2006