By Topic

Optically-triggered Power Transistor (OTPT) for Fly-by-light (FBL) and EMI-susceptible Power Electronics

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Mazumder, S.K. ; Dept. of Electr. & Comput. Eng., Illinois Univ., Chicago, IL ; Sarkar, T.

Significance of direct photonically-controlled power switching devices has been illustrated for electromagnetic-interference immune power electronics. Experimental prototype, initial characterization results, and key simulation results for III-V GaAs/AlGaAs-based optically-triggered power transistor have been shown. Superjunction charge-compensation technique and unique optical-modulation properties have been illustrated. Key processing issues for high-voltage III-V epitaxial power device structure have been discussed. Also, it is shown how the optical triggering idea can be extended to devices with higher gain and using wide-bandgap materials (e.g., SiC)

Published in:

Power Electronics Specialists Conference, 2006. PESC '06. 37th IEEE

Date of Conference:

18-22 June 2006