CMOS Technology
Referenced Items are not available for this document.
Cost-Effective Integrated RF Power Transistor in 0.18-
A novel MOS power transistor with high breakdown voltage is proposed and manufactured in a standard 0.18-mum CMOS process without any additional masks or extra process steps. A "U"-type n- drift region formed with shallow trench isolation (STI) layer and n-well is adopted to improve the breakdown voltage. A MOS transistor with 11.6-V breakdown voltage, 18-GHz cutoff frequency, and 30-GHz maximum oscillation frequency has been demonstrated. In addition, it has 11.5-dB power gain, 19.3-dBm output power at 2.45 GHz with power-added efficiency (PAE) of 55%, and 8.3-dB power gain 18.7-dBm output power at 5.8 GHz with PAE of 38%. The presented RF power transistor is cost effective and can be conveniently applied in the power amplifier integration for RF SoC
Published in:
Electron Device Letters, IEEE
(Volume:27
,
Issue:
10
)
Date of Publication: Oct. 2006
- Page(s):
- 856 - 858
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 9116771
- Digital Object Identifier :
- 10.1109/LED.2006.882568
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 25 September 2006
- Issue Date :
- Oct. 2006
- Sponsored by :
- IEEE Electron Devices Society
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