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Decoupling of cold-carrier effects in hot-carrier reliability assessment of HfO/sub 2/ gated nMOSFETs

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9 Author(s)
Hokyung Park ; Dept. of Mater. Sci. & Eng., Gwangju Inst. of Sci. & Technol., South Korea ; Rino Choi ; Byoung Hun Lee ; Seung-Chul Song
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To understand the intrinsic effect of a hot-carrier injection on high-kappa dielectrics free from concurrent cold-carrier trapping, the authors have investigated a hot-carrier-induced damage with channel hot-carrier stresses and substrate hot-carrier stress. Compared to substrate hot-carrier stress, the channel hot-carrier stress shows a more significant cold-carrier-injection effect. By using a detrapping bias, they were able to decouple the effect of cold-carrier trapping from the permanent trap generation induced by the hot-carrier injection. As channel hot-carrier stress bias was reduced, a portion of cold-carrier trapping increased and a portion of interface trap generation decreased

Published in:

IEEE Electron Device Letters  (Volume:27 ,  Issue: 8 )