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Correlating drain-current with strain-induced mobility in nanoscale strained CMOSFETs

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7 Author(s)
Hong-Nien Lin ; Inst. of Electron., Nat. Chiao-Tung Univ., Hsinchu ; Hung-Wei Chen ; Chih-Hsin Ko ; Chung-Hu Ge
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The correlation between channel mobility gain (Deltamu), linear drain-current gain (DeltaIdlin), and saturation drain-current gain (DeltaIdsat) of nanoscale strained CMOSFETs are reported. From the plots of DeltaIdlin versus DeltaIdsat and ballistic efficiency (Bsat,PSS), the ratio of source/drain parasitic resistance (RSD,PSS) to channel resistance (RCH,PSS) of strained CMOSFETs can be extracted. By plotting Deltamu versus DeltaIdlin, the efficiency of Deltamu translated to DeltaIdlin is higher for strained pMOSFETs than strained nMOSFETs due to smaller RSD,PSS-to-RCH,PSS ratio of strained pMOSFETs. It suggests that to exploit strain benefits fully, the RSD,PSS reduction for strained nMOSFETs is vital, while for strained pMOSFETs the DeltaIdlin -to-Deltamu sensitivity is maintained until RSD,PSS becomes comparable to/or higher than RCH,PSS

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Electron Device Letters, IEEE  (Volume:27 ,  Issue: 8 )