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UV photo-responsive characteristics of an n-channel GaN Schottky-barrier MISFET for UV image sensors

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5 Author(s)
Heon-Bok Lee ; Sch. of Electr. Eng. & Comput. Sci., Kyungpook Nat. Univ., Daegu, South Korea ; Hyun-Su An ; Hyun-Ick Cho ; Jung-Hee Lee
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The ultraviolet (UV) responsive properties of the enhancement-mode n-channel Schottky-barrier MISFET (SB-MISFET), which was fabricated on a p-type GaN layer grown on silicon substrate, were investigated. The drain leakage current of the MISFET is less than 1 nA/mm2, which is quite low compared to recently reported photodetectors. The MISFET exhibited a cutoff wavelength of 365 nm, and the UV/visible rejection ratio was about 120 near the threshold voltage. This is the first demonstration of the MISFET-type UV photodetector, which is highly applicable to the UV image sensors

Published in:

IEEE Electron Device Letters  (Volume:27 ,  Issue: 8 )