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SONOS-type flash memory using an HfO/sub 2/ as a charge trapping layer deposited by the sol-gel spin-coating method

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6 Author(s)
Hsin-Chiang You ; Inst. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu ; Tze-Hsiang Hsu ; Fu-Hsiang Ko ; Jiang-Wen Huang
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In this letter, the authors fabricate the silicon-oxide-nitride-oxide-silicon (SONOS)-like memory using an HfO2 as charge trapping layer deposited by a very simple sol-gel spin-coating method and 900 degC 1-min rapid thermal annealing. They examine the quality of sol-gel HfO2 charge trapping layer by X-ray photoemission spectroscopy, Id-Vg, charge retention, and endurance. The threshold voltage shift is 1.2 V for the sol-gel HfO2 trapping layer. The sol-gel HfO2 film can form a deep trap layer to trap electrons for the SONOS-like memory. Therefore, the sol-gel device exhibits the long charge retention time and good endurance performance. The charge retention time is 104 s with only 6% charge loss and long endurance program/erase cycles up to 105

Published in:

Electron Device Letters, IEEE  (Volume:27 ,  Issue: 8 )