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A leakage-tolerant low-swing circuit style in partially depleted silicon-on-insulator CMOS technologies

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2 Author(s)
Jae-Joon Kim ; Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA ; K. Roy

The parasitic bipolar leakage and the large subthreshold leakage due to high floating-body voltage reduce the noise margin and increase the delay of the circuits in the partially depleted silicon-on-insulator (PD/SOI). Differential cascode voltage switch logic (DCVSL) has circuit topologies susceptible to the leakage currents. In this paper, we propose a new circuit style to effectively handle the leakage problems in PD/SOI DCVSL. The proposed low-swing DCVSL (LS-DCVSL) uses the small internal swing to prevent the body of evaluation transistors from being charged to high voltage and, hence, suppress the leakages in DCVSL. Simulation results show that the proposed LS-DCVSL five-input XOR circuit is 33% faster than DCVSL five-input XOR circuit. In addition, the proposed circuit does not experience noise margin reduction due to pass-gate leakage.

Published in:

IEEE Transactions on Very Large Scale Integration (VLSI) Systems  (Volume:14 ,  Issue: 5 )