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A CMOS, fully integrated sensor for electronic detection of DNA hybridization

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6 Author(s)
M. Barbaro ; Dept. of Electr. & Electron. Eng., Cagliari Univ., Italy ; A. Bonfiglio ; L. Raffo ; A. Alessandrini
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An integrated field-effect device for fully electronic deoxyribonucleic acid (DNA) detection was realized in a standard CMOS process. The device is composed of a floating-gate MOS transistor, a control-capacitor acting as integrated counterelectrode, and an exposed active area for DNA immobilization. The drain-current of the transistor is modulated by the electric charge carried by the DNA molecules. After DNA hybridization, this charge increases and a change in the output current is measured. Experimental results are provided. Full compatibility with a standard CMOS process opens the way to the realization of low-cost large-scale integration of fast electronic DNA detectors.

Published in:

IEEE Electron Device Letters  (Volume:27 ,  Issue: 7 )