By Topic

Process optimization for high electron mobility in nMOSFETs with aggressively scaled HfO2/metal stacks

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

13 Author(s)
Narayanan, V. ; IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA ; Maitra, K. ; Linder, B.P. ; Paruchuri, V.K.
more authors

The performance of aggressively scaled (1.4nminv<2.1nm) self-aligned HfO2-based nMOSFETs with various metal gate electrodes (W, TaN, TiN, and TaSiN) is optimized. It is shown that high mobility values, competitive with oxynitride controls (SiON/poly-Si, Tinv∼1.8-2.1nm), can be achieved. Detailed studies of the role of interface states, remote charges in the HfO2 layer, interfacial layer regrowth, and nitrogen-induced charge lead to the conclusion that high-temperature-induced structural modifications near the SiO2/HfO2 interface substantially improve the electron mobility.

Published in:

Electron Device Letters, IEEE  (Volume:27 ,  Issue: 7 )