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Fabrication and characterization of field-plated buried-gate SiC MESFETs

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9 Author(s)
Andersson, K. ; Microwave Electron. Lab., Chalmers Univ. of Technol., Goteborg, Sweden ; Sudow, M. ; Nilsson, P.-A. ; Sveinbjornsson, E.
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Silicon carbide (SiC) MESFETs were fabricated using a standard SiC MESFET structure with the application of the "buried-channel" and field-plate (FP) techniques in the process. FPs combined with a buried-gate are shown to be favorable concerning output power density and power-added efficiency (PAE), due to higher breakdown voltage and decreased output conductance. A very high power density of 7.8 W/mm was measured on-wafer at 3 GHz for a two-finger 400-μm gate periphery SiC MESFET. The PAE for this device was 70% at class AB bias. Two-tone measurements at 3 GHz ± 100 kHz indicate an optimum FP length for high linearity operation.

Published in:

Electron Device Letters, IEEE  (Volume:27 ,  Issue: 7 )

Date of Publication:

July 2006

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