Referenced Items are not available for this document.
Silicon carbide (SiC) MESFETs were fabricated using a standard SiC MESFET structure with the application of the "buried-channel" and field-plate (FP) techniques in the process. FPs combined with a buried-gate are shown to be favorable concerning output power density and power-added efficiency (PAE), due to higher breakdown voltage and decreased output conductance. A very high power density of 7.8 W/mm was measured on-wafer at 3 GHz for a two-finger 400-μm gate periphery SiC MESFET. The PAE for this device was 70% at class AB bias. Two-tone measurements at 3 GHz ± 100 kHz indicate an optimum FP length for high linearity operation.
Published in:
Electron Device Letters, IEEE
(Volume:27
,
Issue:
7
)
Date of Publication: July 2006
- Page(s):
- 573 - 575
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 8990871
- Digital Object Identifier :
- 10.1109/LED.2006.877285
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 26 June 2006
- Issue Date :
- July 2006
- Sponsored by :
- IEEE Electron Devices Society
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