Referenced Items are not available for this document.
This letter presents the first demonstration of a silicon-germanium heterojunction bipolar transistor (SiGe HBT) capable of operation above the one-half terahertz (500 GHz) frequency. An extracted peak unity gain cutoff frequency (fT) of 510 GHz at 4.5 K was measured for a 0.12×1.0 μm2 SiGe HBT (352 GHz at 300 K) at a breakdown voltage BVCEO of 1.36 V (1.47 V at 300 K), yielding an fT×BVCEO product of 693.6 GHz-V at 4.5 K (517.4 GHz-V at 300 K).
Published in:
Electron Device Letters, IEEE
(Volume:27
,
Issue:
7
)
Date of Publication: July 2006
- Page(s):
- 567 - 569
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 8990869
- Digital Object Identifier :
- 10.1109/LED.2006.876298
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 26 June 2006
- Issue Date :
- July 2006
- Sponsored by :
- IEEE Electron Devices Society
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