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Leaky-wave photodiodes with a partially p-doped absorption Layer and a distributed Bragg reflector (DBR) for high-power and high-bandwidth-responsivity product performance

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7 Author(s)
W. -Y. Chiu ; Dept. of Electr. Eng., Nat. Central Univ., Taoyuan, Taiwan ; J. -W. Shi ; W. -K. Wang ; Y. -S. Wu
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In this letter, we describe a novel edge-coupled photodiode (PD) structure, which can greatly relax the dependence of the responsivity on the cleaved length of an evanescently coupled optical waveguide. The integration of a leaky optical waveguide with a distributed Bragg reflector (DBR) and a partially p-doped photoabsorption layer allows the demonstrated device to exhibit a higher saturation current-bandwidth and responsivity than a control sample without the DBR structure. We achieved excellent speed (40-50 GHz), responsivity (0.8 A/W), and saturation current-bandwidth products (720 mAmiddotGHz at 40 GHz), comparable to the high-performance of an evanescently coupled PD, whose variation of responsivity is more sensitive to the cleaved waveguide length (30% versus 7%) than is our demonstrated device

Published in:

IEEE Photonics Technology Letters  (Volume:18 ,  Issue: 11 )