Referenced Items are not available for this document.
Inverted-F antennas of 2-mm axial length are designed and fabricated on a low-resistivity silicon substrate (10 Ω·cm) using a post back-end-of-line process. For the first time, their performances are measured up to 110 GHz for wireless interconnects. Results show that a sharp resonance can be seen at 61 GHz for the antenna, and a high transmission gain of -46.3 dB at 61 GHz is achieved from the pair of inverted-F antennas at a separation of 10 mm on a standard 10 Ω·cm silicon wafer of 750-μm thickness.
Published in:
Electron Device Letters, IEEE
(Volume:27
,
Issue:
5
)
Date of Publication: May 2006
- Page(s):
- 374 - 376
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 8898058
- Digital Object Identifier :
- 10.1109/LED.2006.872351
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 01 May 2006
- Issue Date :
- May 2006
- Sponsored by :
- IEEE Electron Devices Society
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