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Inverted-F antennas of 2-mm axial length are designed and fabricated on a low-resistivity silicon substrate (10 Ω·cm) using a post back-end-of-line process. For the first time, their performances are measured up to 110 GHz for wireless interconnects. Results show that a sharp resonance can be seen at 61 GHz for the antenna, and a high transmission gain of -46.3 dB at 61 GHz is achieved from the pair of inverted-F antennas at a separation of 10 mm on a standard 10 Ω·cm silicon wafer of 750-μm thickness.
Date of Publication: May 2006