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Ultrahigh-performance 8-GHz SiGe power HBT

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3 Author(s)
Guogong Wang ; Dept. of Electr. & Comput. Eng., Univ. of Wisconsin, Madison, WI, USA ; Yuan, Hao-Chih ; Zhenqiang Ma

This letter has demonstrated the state-of-the-art SiGe power heterojunction bipolar transistors (HBTs) operating at 8 GHz. In a common-base configuration, a continuous wave output power of 27.72 dBm with a concurrent power gain of 12.19 dB was measured at a peak power-added efficiency of 60.6% from a single SiGe HBT with a 3-μm emitter finger stripe width and a 1340 μm2 total emitter area. The highest power-performance figure of merit (FOM) of 3.8×105 mW·GHz2 achieved from the device was resulted from using an optimized SiGe heterostructure and a compact device layout, which is made possible with a heavily doped base region.

Published in:

Electron Device Letters, IEEE  (Volume:27 ,  Issue: 5 )

Date of Publication:

May 2006

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