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Browse Journals & Magazines > Electron Device Letters, IEEE ...> Volume:27 Issue:5 Help

Memory effect in the current-voltage characteristic of 8-hydroquinoline aluminum salt films

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3 Author(s)
Tu, Chia-Hsun ; Dept. of Electr. & Comput. Eng., Univ. of Texas, Austin, TX, USA ; Lai, Yi-Sheng ; Dim-Lee Kwong

This letter investigated the reproducible bistable resistance switching characteristics of a single-layer organic device based on 8-hydroquinoline aluminum (Alq3) fabricated by spin coating. By controlling the ON-state current through the Alq3 films, it has been possible to achieve various resistance states of the films. In addition, the resistance of the ON-state Alq3 films also affects the threshold current and voltage to switch off the device. The independence of the current-injected direction to erase the ON state implies that the filament theory could elucidate the observed phenomenon. The ratio between low- and high-resistance states can reach five orders of magnitude, which will be a potential material for nonvolatile memory application.

Published in:
Electron Device Letters, IEEE  (Volume:27 ,  Issue: 5 )

Date of Publication: May 2006

Page(s):
354 - 356
ISSN :
0741-3106
INSPEC Accession Number:
8898054
Digital Object Identifier :
10.1109/LED.2006.872915
Product Type:
Journals & Magazines
Date of Current Version :
01 May 2006
Issue Date :
May 2006
Sponsored by :
IEEE Electron Devices Society

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