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This letter investigated the reproducible bistable resistance switching characteristics of a single-layer organic device based on 8-hydroquinoline aluminum (Alq3) fabricated by spin coating. By controlling the ON-state current through the Alq3 films, it has been possible to achieve various resistance states of the films. In addition, the resistance of the ON-state Alq3 films also affects the threshold current and voltage to switch off the device. The independence of the current-injected direction to erase the ON state implies that the filament theory could elucidate the observed phenomenon. The ratio between low- and high-resistance states can reach five orders of magnitude, which will be a potential material for nonvolatile memory application.
Date of Publication: May 2006