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Characteristics of Al2O3/TiO2 nanolaminates and AlTiO thin films on Si

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3 Author(s)
Mikhelashvili, V. ; Dept. of Electr. Eng., Technion-Israel Inst. of Technol., Haifa, Israel ; Garshtein, E. ; Eisenstein, G.

This letter reports a metal-insulator-semiconductor structure based on Al2O3/TiO2 nanolaminates and AlTiO films evaporated on an unheated p-Si substrate. The structure exhibits a low hysteresis in the capacitance-voltage characteristics, a larger dielectric constant leading to a quantum mechanically corrected effective oxide thickness of 1.35-2.1 nm, good stability of the electrical characteristics to thermal processes, a large breakdown electric field of 7.5 MV/cm, and a leakage current density below 5×10-7 A/cm2 at an electric field of 2 MV/cm.

Published in:

Electron Device Letters, IEEE  (Volume:27 ,  Issue: 5 )