Referenced Items are not available for this document.
A 13.56-MHz class-E amplifier with a high-voltage GaN HEMT as the main switching device is demonstrated to show the possibility of using GaN HEMTs in high-frequency switching power applications such as RF power-supply applications. The 380-V/1.9-A GaN power HEMT was designed and fabricated for high-voltage power-electronics applications. The demonstrated circuit achieved the output power of 13.4 W and the power efficiency of 91% under a drain-peak voltage as high as 330 V. This result shows that high-voltage GaN devices are suitable for high-frequency switching applications under high dc input voltages of over 100 V.
Published in:
Electron Device Letters, IEEE
(Volume:27
,
Issue:
5
)
Date of Publication: May 2006
- Page(s):
- 326 - 328
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 8888714
- Digital Object Identifier :
- 10.1109/LED.2006.873756
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 01 May 2006
- Issue Date :
- May 2006
- Sponsored by :
- IEEE Electron Devices Society
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
