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Vertical high-mobility wrap-gated InAs nanowire transistor

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4 Author(s)
Bryllert, T. ; Dept. of Solid State Phys., Lund Univ., Sweden ; Wernersson, L.-E. ; Froberg, L.E. ; Samuelson, Lars

In this letter, the authors demonstrate a vertical wrap-gated field-effect transistor based on InAs nanowires [Proc. DRC, 2005, p. 157]. The nanowires have a diameter of 80 nm and are grown using selective epitaxy; a matrix of typically 10 × 10 vertically standing wires is used as channel in the transistor. The authors measure current saturation at Vds=0.15 V (Vg=0 V), and a high mobility, compared to the previous nanowire transistors, is deduced.

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Electron Device Letters, IEEE  (Volume:27 ,  Issue: 5 )