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Microwave performance of GaAs MOSFET with wet thermally oxidized InAlP gate dielectric

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6 Author(s)
Cao, Y. ; Dept. of Electr. Eng., Univ. of Notre Dame, IN, USA ; Li, X. ; Zhang, J. ; Fay, P.
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This paper reports the first demonstration of a microwave-frequency operation of a GaAs MOSFET fabricated using a wet thermal oxidization of InAlP lattice-matched to GaAs to form a native-oxide gate insulator. Devices with 1-μm gate lengths exhibit a cutoff frequency (ft) of 13.7 GHz and a maximum frequency of oscillation (fmax) of 37.6 GHz, as well as a peak extrinsic transconductance of 73.6 mS/mm. A low-leakage current density of 3.8×10-3 A/cm2 at 1-V bias for an MOS capacitor demonstrates the good insulating properties of the ∼ 11-nm thick native gate oxide.

Published in:

Electron Device Letters, IEEE  (Volume:27 ,  Issue: 5 )

Date of Publication:

May 2006

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