By Topic

Single-chip dual-band WLAN power amplifier using InGaP/GaAs HBT

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
2 Author(s)
Chien-Cheng Lin ; Comput. & Commun. Res. Labs., Ind. Technol. Res. Inst., Hsinchu, Taiwan ; Yu-Cheng Hsu

A single-chip dual-band power amplifier monolithic microwave integrated circuit (MMIC) operating at 3.5V single supply has been developed for both WLAN 2.4GHz and 5.2GHz with IEEE 802.11b/g/a standards applications. The MMIC utilizes the process of WINs Corp. with an InGaP/GaAs HBT process. The dual-band power amplifier constructed based on the design of adaptive RF bias choke circuits and proper output matching networks. The proposed WLAN PA chip provides low current consumption and high power added efficiency. The WLAN-PA is implemented as a two-stage MMIC with active bias and input pre-matching and inter-stage matching networks integrated. In addition, the PA is a broadband power amplifier with above 20dB flat gain between the frequency bands of 2.2GHz to 5.5GHz.

Published in:

Microwave Conference, 2005 European  (Volume:3 )

Date of Conference:

4-6 Oct. 2005