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The following topics are dealt with: high-k metal gate stacks; integrated circuits and manufacturing; advanced interconnect technology; displays, sensors, and MEMS; organic and flexible electronics; CMOS devices; solid-state and nanoelectronic devices; nonvolatile memory technologies; MONOS and nanocrystal memories; CMOS and interconnect reliability; modeling and simulation; nanotubes and nanowires; DRAM and NAND Flash; quantum, power and compound semiconductor devices; RF power and power switching devices; gate dielectric breakdown; strained silicon technology; advanced planar CMOS devices; fully silicided gates; SRAM; bias-temperature instability and interface traps; advanced FEOL technology; SOI and multi-gate devices; resistive switching memories; image sensors and photon detectors; thin film transistors for displays and system on panel; and III-V light emitters

Published in:

Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International

Date of Conference:

5-5 Dec. 2005

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