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GaN-based p-i-n sensors with ITO contacts

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11 Author(s)
Chang, S.J. ; Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan ; Ko, T.K. ; Su, Y.K. ; Chiou, Y.Z.
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Nitride-based p-i-n sensors with indium-tin-oxide electrodes on Mg-doped AlGaN/GaN strain layer superlattice structure were fabricated and characterized. It was found that the fabricated sensors exhibit small dark current and large reverse breakdown voltage. With an incident wavelength of 355 nm, we achieved a peak responsivity of 0.17 A/W which corresponds to 59% external quantum efficiency for sensors with 500°C annealed ITO(70 nm) p-contacts.

Published in:

Sensors Journal, IEEE  (Volume:6 ,  Issue: 2 )