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On the generation and recovery of hot carrier induced interface traps: a critical examination of the 2-D R-D model

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3 Author(s)
D. Saha ; Dept. of Electr. Eng., Indian Inst. of Technol., Mumbai, India ; D. Varghese ; S. Mahapatra

The generation and recovery of interface traps (NIT) during and after hot carrier injection stress is evaluated by the recently proposed two-dimensional (2-D) reaction diffusion (R-D) model. The power law time exponent (n) of NIT generation as well as the magnitude of fractional and absolute recovery after the stress cannot be fully explained by considering only the spatial extent of broken ≡Si-H bonds, as is done by 2-D R-D model. Additional contribution due to broken ≡Si-O bonds also plays a major role in determining the overall NIT generation and recovery behavior.

Published in:

IEEE Electron Device Letters  (Volume:27 ,  Issue: 3 )