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Thermal stability of HfxTayN metal gate electrodes for advanced MOS devices

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5 Author(s)
Chin-Lung Cheng ; Inst. of Mech. & Electro-Mech. Eng., Nat. Formosa Univ., Yunlin, Taiwan ; Kuei-Shu Chang-Liao ; Tzu-Chen Wang ; Tien-Ko Wang
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In this letter, the composition effects of hafnium (Hf) and tantalum (Ta) in HfxTayN metal gate on the thermal stability of MOS devices were investigated. The work function of the HfxTayN metal gate can reach a value of ∼4.6 eV (midgap of silicon) by suitably adjusting the Hf and Ta compositions. In addition, with a small amount of Hf incorporated into a TaN metal gate, excellent thermal stability of electrical properties, including the work function, the equivalent oxide thickness, interface trap density and defect generation rate characteristics, can be achieved after a post-metal anneal up to 950°C for 45 s. Experimental results indicate that Ta-rich HfxTayN is a promising metal gate for advanced MOS devices.

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IEEE Electron Device Letters  (Volume:27 ,  Issue: 3 )