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A Novel High Performance Integrated Phototransistor Photodetector (PTPD) In Standard SiGe BiCMOS Technology

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3 Author(s)
Kuang-Sheng Lai ; Inst. of Electron. Eng., National Tsing Hua Univ., Hsinchu ; Ji-Chen Huang ; Hsu, K.Y.J.

A novel high performance integrated PTPD is proposed. The device incorporates a standard phototransistor (PT) and a surface photodetector (SPD) to frilly utilize the incident light energy. Samples in standard 0.35mum SiGe BiCMOS technology were fabricated and characterized. Compared with reference PT of the same size, the PTPD exhibits one order of magnitude improvement in responsivity

Published in:
Semiconductor Device Research Symposium, 2005 International

Date of Conference: 7-9 Dec. 2005

Page(s):
17 - 18
Print ISBN:
1-4244-0083-X
INSPEC Accession Number:
8914078
Conference Location :
Bethesda, MD
Digital Object Identifier :
10.1109/ISDRS.2005.1595954
Product Type:
Conference Publications

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