By Topic

A Novel High Performance Integrated Phototransistor Photodetector (PTPD) In Standard SiGe BiCMOS Technology

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Kuang-Sheng Lai ; Inst. of Electron. Eng., National Tsing Hua Univ., Hsinchu ; Ji-Chen Huang ; K. Y. -J. Hsu

A novel high performance integrated PTPD is proposed. The device incorporates a standard phototransistor (PT) and a surface photodetector (SPD) to frilly utilize the incident light energy. Samples in standard 0.35mum SiGe BiCMOS technology were fabricated and characterized. Compared with reference PT of the same size, the PTPD exhibits one order of magnitude improvement in responsivity

Published in:

2005 International Semiconductor Device Research Symposium

Date of Conference:

7-9 Dec. 2005