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The Temperature Dependence in the Subthreshold Regime of Fully Depleted Double-Gate FinFETs

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3 Author(s)

An experimental investigation of the effects of temperature between 218K and 393K of FinFET operation in weak inversion is reported. The threshold voltage, subthreshold swing and the drain current at which extrapolated threshold voltage is defined, IVT, of fully depleted double gate n-type FinFETs are analysed. A VT temperature coefficient of -0.7mV/K is experimentally observed for our FinFETs, greater than the calculated theoretical temperature coefficient of -0.59mV/K, but smaller than that calculated for partially depleted MOSFETs (-0.9mV/K). The subthreshold swing is found to be proportional to absolute temperature, as expected. A significant dependence of IVT on temperature is observed, which raises the issue of dependence of extracted dVT/dT on extraction method

Published in:

Semiconductor Device Research Symposium, 2005 International

Date of Conference:

7-9 Dec. 2005