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Design of distributed amplifiers and oscillators in 130 nm SOI MOS technology

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8 Author(s)
Moussa, M.S. ; Microwave Lab., Univ. Catholique de Louvain, Louvain-la-Neuve, Belgium ; Pavageau, C. ; Picheta, L. ; Danneville, F.
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In this paper, the design and the results of two CMOS silicon-on-insulator (SOI) distributed amplifiers (DA) are presented. Partially-depleted SOI process using microstrip lines, and floating-body (FB) transistors are considered. The measured gain is around 4.5 dB with a 0.4-30 GHz bandwidth for the common source DA (CSDA) and around 7 dB with a 0.4-26 GHz bandwidth for the cascode DA (CDA). The optimized performances were found for 1.4 V supply voltage, which corresponds to a DC power consumption of 66 and 55 mW for the CSDA and the CDA, respectively. The CSDA circuit has been extended to design a distributed oscillator (DO) at 12 GHz, and CDA to a cascaded CDA with a cut-off frequency of 48 GHz and 8 dB gain.

Published in:

Silicon Monolithic Integrated Circuits in RF Systems, 2006. Digest of Papers. 2006 Topical Meeting on

Date of Conference:

18-20 Jan. 2006