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Very High Power IGCT PEBB technology

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5 Author(s)
P. K. Steimer ; Power Electron. & MV Drives, ABB Switzerland Ltd., Turgi ; B. Oedegard ; O. Apeldoorn ; S. Bernet
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In the field of power electronics the power electronics building block (PEBB) is a key functional component. With regard to the applications, it is of outmost importance that the PEBB technology used is compact, cost-effective and reliable. The IGCT is at the forefront of technology in high power, medium-voltage applications. For further improvement in size and costs a new ANPC IGCT PEBB has been developed. The main new technologies to achieve higher powers are the new low-inductive gate-unit to maintain hardswitched operation up to more than 6000 A, the increased SOA of the 91 mm asymmetric IGCT (4 inch technology) and the antiparallel diode up to more than 6000 A and the active NPC technology, which allows an optimum and equal loss balancing in all power semiconductors. The maximum inverter output power has been increased by 80% with a parallel increase in the power density and reduced costs per kVA

Published in:

2005 IEEE 36th Power Electronics Specialists Conference

Date of Conference:

16-16 June 2005