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Direct comparison of 1300 nm GaInNAs lasers with GaAsN and GaAs barriers

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8 Author(s)
Y. Q Wei ; Dept. of Microtechnol. & Nanosci., Chalmers Univ. of Technol., Goteborg ; X. D. Wang ; P. Modh ; P. O. Hedekvist
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In order to better understand the differences between lasers with GaAs and GaAsN barriers, this paper has experimentally compared their basic performance characteristics, including threshold currents and spectral gain characteristics. The laser with GaAsN barriers has a reduced N-content in the quantum well to achieve almost identical emission wavelengths. Otherwise the laser structures are the same and the materials were grown in consecutive growth runs to minimize other differences

Published in:

EQEC '05. European Quantum Electronics Conference, 2005.

Date of Conference:

12-17 June 2005