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Carrier dynamics in self-assembled quantum-dot materials and devices

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1 Author(s)
Borri, Paola ; Cardiff Univ., UK

This study presents an overview of recent measurements of the dephasing time and gain recovery dynamics in InGaAs/GaAs QD material and devices. Results indicate that the ultrafast gain recovery on a subpicosecond time scale measured at room temperature is related to the presence of several carriers in the excited states of the QD, i.e. to a multiexciton state with several available channels for relaxation.

Published in:

Quantum Electronics Conference, 2005. EQEC '05. European

Date of Conference:

12-17 June 2005

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