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Amplification of the semiconductor spin valve effect by a third ferromagnetic metal terminal

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3 Author(s)
Dery, H. ; Dept. of Phys., Univ. of California San Diego, La Jolla, CA ; Cywinski, L. ; Sham, L.J.

We have put forth a theoretical proposition of a spin-valve like device, which is well-suited for integration with existing semiconductor-based electronics. The three-terminal design takes advantage of the diffusive character of transport in the SC channel, and all the modeling was done at room temperature, using conservative parameters. Our device can be used as a spin transistor, or as a building block of reprogrammable magnetic logic gate

Published in:

Device Research Conference Digest, 2005. DRC '05. 63rd  (Volume:2 )

Date of Conference:

22-22 June 2005