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Total ionizing dose effects in bipolar and BiCMOS devices

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4 Author(s)
Chavez, R.M. ; Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA ; Rax, B.G. ; Scheick, L.Z. ; Johnston, A.H.

This paper describes total ionizing dose (TID) test results performed at JPL. Bipolar and BiCMOS device samples were tested exhibiting significant degradation and failures at different irradiation levels. Linear technology which is susceptible to low-dose dependency (ELDRS) exhibited greater damage for devices tested under zero bias condition.

Published in:

Radiation Effects Data Workshop, 2005. IEEE

Date of Conference:

11-15 July 2005

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