By Topic

A low-power tunable SiGe HBT LNA for wireless LAN applications

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Carta, C. ; Electromagn. Fields & Microwave Electron. Lab., Swiss Fed. Inst. of Technol., Zurich, Switzerland ; Carls, J. ; Bachtold, Werner

This paper presents the design, implementation and measurements of a BiCMOS integrated tunable low noise amplifier for 5 GHz WLAN applications. It consists of a cascode gain cell, noise and power matched to a 50 Ω input source, and power matched to a 50 Ω load. In order to broaden the available bandwidth, the output matching network is modified by means of a shunt varactor, thus allowing the tuning of output matching and peak gain over a band exceeding 1 GHz. The proposed topology modification proofs to have neglectable effects on other LNA features, such as noise figure, linearity and input matching. Realized in a 120 GHz-ft commercial BiCMOS technology, the circuit exhibits 13.2 dB of flat power gain, 2.3 dB of NF, -9 dBm of iIP3, -20.5 dBm of P1 dBm input and output return losses better than -10 dB in the 5-6 GHz band. Power consumption is 6 mW.

Published in:

Wireless and Microwave Technology, 2005. WAMICON 2005. The 2005 IEEE Annual Conference

Date of Conference:

2005