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Highly integrated 60 GHz transmitter and receiver MMICs in a GaAs pHEMT technology

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7 Author(s)
S. E. Gunnarsson ; Dept. of Microtechnol. & Nanosci., Chalmers Univ. of Technol., Goteborg, Sweden ; C. Karnfelt ; H. Zirath ; R. Kozhuharov
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Highly integrated transmitter and receiver MMICs have been designed in a commercial 0.15 μm, 88 GHz fT/183 GHz fMAX GaAs pHEMT MMIC process and characterized on both chip and system level. These chips show the highest level of integration yet presented in the 60 GHz band and are true multipurpose front-end designs. The system operates with an LO signal in the range 7-8 GHz. This LO signal is multiplied in an integrated multiply-by-eight (X8) LO chain, resulting in an IF center frequency of 2.5 GHz. Although the chips are inherently multipurpose designs, they are especially suitable for high-speed wireless data transmission due to their very broadband IF characteristics. The single-chip transmitter MMIC consists of a balanced resistive mixer with an integrated ultra-wideband IF balun, a three-stage power amplifier, and the X8 LO chain. The X8 is a multifunction design by itself consisting of a quadrupler, a feedback amplifier, a doubler, and a buffer amplifier. The transmitter chip delivers 3.7±1.5 dBm over the RF frequency range of 54-61 GHz with a peak output power of 5.2 dBm at 57 GHz. The single-chip receiver MMIC contains a three-stage low-noise amplifier, an image reject mixer with an integrated ultra-wideband IF hybrid and the same X8 as used in the transmitter chip. The receiver chip has 7.1±1.5 dB gain between 55 and 63 GHz, more than 20 dB of image rejection ratio between 59.5 and 64.5 GHz, 10.5 dB of noise figure, and -11 dBm of input-referred third-order intercept point (IIP3).

Published in:

IEEE Journal of Solid-State Circuits  (Volume:40 ,  Issue: 11 )