By Topic

Complex permittivity measurements of dielectrics and semiconductors at millimeter waves with high power sources

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Afsar, M.N. ; Dept. of Electr. & Comput. Eng., Tufts Univ., Medford, MA, USA ; Korolev, K.A. ; Subramanian, Lakshmi ; Tkachov, I.I.

We present complex dielectric permittivity measurements of various semiconductor and dielectric materials, including highly absorbing substances, in Q-, V- and W-band frequencies. The measurements have been done using broadband quasioptical millimeter wave system with a backward-wave oscillator as a high power source of radiation. Frequency dependencies of real and imaginary parts of dielectric permittivity are calculated from the transmittance spectra. Complex dielectric permittivity data, obtained using both waveguide bridge technique and free space measurements have been compared with previously published results.

Published in:

Microwave Symposium Digest, 2005 IEEE MTT-S International

Date of Conference:

12-17 June 2005