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The extraction and modeling of intrinsic RF noise sources in 0.13 μm nMOSFETs

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8 Author(s)
S. Venkataraman ; Georgia Electron. Design Center, Georgia Inst. of Technol., Atlanta, GA, USA ; B. Banerjee ; Chang-Ho Lee ; J. D. Cressler
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We present the first comprehensive analysis of the broadband noise sources in state-of-the-art 0.13 μm nMOSFETs, and introduce a sub-circuit-based RF noise model for these devices. An extraction procedure for obtaining the channel thermal noise, the induced gate noise, and the gate and bulk resistance-induced thermal noise, directly from the S-parameter and broadband noise measurements is presented. The extracted noise sources are incorporated in the sub-circuit model to obtain the simulated noise parameters. The presented results show an excellent agreement between the modeled and measured data across frequency up to 15GHz and under various bias conditions.

Published in:

IEEE MTT-S International Microwave Symposium Digest, 2005.

Date of Conference:

12-17 June 2005